| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee1c19da359446fb5c4f0458a57b783d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-09472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0347 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24C3-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24C7-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-13 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-30 |
| filingDate |
2014-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79e693f3a036d21707aeaae121342e45 |
| publicationDate |
2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014201993-A1 |
| titleOfInvention |
Substrate for mounting element and process for its production |
| abstract |
To provide a substrate for mounting element having sulfurization resistance improved by increasing planarity of the surface of a thick conductor layer. n The substrate 10 for mounting element of the present invention has such a structure that on a surface of a LTCC substrate or ceramics substrate as an inorganic insulating substrate 1 , a thick conductor layer 2 is formed as an element connection terminal. The thick conductor layer 2 is made of a metal composed mainly of silver (Ag) or copper (Cu) and formed by printing and firing a metal paste. This thick conductor layer has its surface planarized by wet blast treatment to a surface roughness Ra of at most 0.02 μm. A Ni/Au-plated layer 3 is formed on the thick conductor layer 2 , so that the surface of the thick conductor layer 2 is completely covered without any space. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10297498-B2 |
| priorityDate |
2010-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |