| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4eaf73a75df42e38766e9f96c036fd7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59c6a921f33fe0adc58c2b6177184515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_072ba11614d1c736c8047bdd2c3c3ad1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B2562-125 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-04001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B5-375
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a4c3dfedb17620d8f11aaae5eedb0ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_711d127d93b2c3917aecdae08e627cba |
| publicationDate |
2014-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014194719-A1 |
| titleOfInvention |
Long-Term Implantable Silicon Carbide Neural Interface Device Using the Electrical Field Effect |
| abstract |
Field effect devices, such as capacitors and field effect transistors, are used to interact with neurons. Cubic silicon carbide is biocompatible with the neuronal environment and has the chemical and physical resilience required to withstand the body environment and does not produce toxic byproducts. It is used as a basis for generating a biocompatible semiconductor field effect device that interacts with the brain for long periods of time. The device signals capacitively and receives signals using field effect transistors. These signals can be used to drive very complicated systems such as multiple degree of freedom limb prosthetics, sensory replacements, and may additionally assist in therapies for diseases like Parkinson's disease. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11547849-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011465-B2 |
| priorityDate |
2011-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |