Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
filingDate |
2013-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e942499cdd3cf9ca3c5e1547c6583d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6147e5dfd3b721ca7f0cf5a6c0280cb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3c7bf1d48433650f1ee84966a9b6add |
publicationDate |
2014-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014191284-A1 |
titleOfInvention |
Group iii nitrides on nanopatterned substrates |
abstract |
A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III nitride material is grown atop the mesa surface portions of the patterned substrate and atop the recessed surface. Growth of the Group III nitride material is continued merging the Group III nitride material that is grown atop the mesa surface portions. When the Group III nitride material located atop the mesa surface portions merge, the Group III nitride material growth on the recessed surface ceases. The merged Group III nitride material forms a first Group III nitride material structure, and the Group III nitride material formed in the recessed surface forms a second material structure. The first and second material structures are disjoined from each other and are separated by an air gap. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021258820-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658541-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019103506-A1 |
priorityDate |
2013-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |