http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014183506-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_02cfb0f1aa2718c61bdf184d53adfe79 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate | 2014-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b5f88441196575681db52cce400e54a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11dffc005afd3a391f97d05fdcb0a962 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49c9acda10fc2e5716eb02fa68c83903 |
| publicationDate | 2014-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2014183506-A1 |
| titleOfInvention | Method for manufacturing transistor and transistor |
| abstract | A method for manufacturing a transistor includes: forming a base film for supporting a catalyst for electroless plating; forming a resist layer having an opening portion corresponding to source and drain electrodes onto the base film; causing the base film within the opening portion to support the catalyst for electroless plating and performing a first electroless plating; removing the resist layer; performing a second electroless plating on a surface of an electrode which is formed by the first electroless plating and forming the source and drain electrodes; and forming a semiconductor layer in contact with surfaces of the source and drain electrodes, the surfaces facing each other, wherein an energy level difference between a work function of a material which is used for the second electroless plating and an energy level of a molecular orbital which is used for electron transfer in a material of the semiconductor layer is less than an energy level difference between a work function of a material which is used for the first electroless plating and the energy level of the molecular orbital. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017019987-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10426037-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10524362-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019086288-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016141530-A1 |
| priorityDate | 2011-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.