| abstract |
A semiconductor device comprises a transistor formed in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode being adjacent to the channel region. The gate electrode is configured to control a conductivity of a channel formed in the channel region, the channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The channel region has a shape of a first ridge extending along the first direction, and the transistor includes a first field plate arranged adjacent to the drift zone. |