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publicationDate 2014-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014151755-A1
titleOfInvention Backside cmos compatible biofet with no plasma induced damage
abstract The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
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