http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014147995-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc744e119404fec0abdf375e51d1168d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2013-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfe1e734e93742e446c0d67e8df4689b |
| publicationDate | 2014-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2014147995-A1 |
| titleOfInvention | Method for producing p-type nitride semiconductor layer |
| abstract | A method of manufacturing a p type nitride semiconductor layer doped with carbon in a highly reproducible manner with an increased productivity is provided. The method includes supplying an III-group material gas for a predetermined time period T 1 , supplying a V-group material gas containing a carbon source for a predetermined time period T 2 when a predetermined time period t 1 (t 1 +T 2 >T 1 ) elapses after the supply of the III-group material gas begins, repeating the step of supplying the III-group material gas and the step of supplying the V-group material gas when a predetermined time period t 2 (t 1 +T 2 −t 2 >T 1 ) elapses after the supply of the V-group material gas begins, and thus forming an Al x Ga 1-x N semiconductor layer (0<x≦1) at a growth temperature of 1190° C.˜1370° C. or a growth temperature at which a substrate temperature is 1070° C.˜1250° C. using a chemical vapor deposition method or a vacuum evaporation method. Nitrogen sites within the semiconductor layer are doped with carbon. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105720139-A |
| priorityDate | 2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.