Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-39 |
filingDate |
2013-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddafcbbddfc3b55ba1300b62a7dfb02c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39484a3a19f976aec5b46fadbba446af |
publicationDate |
2014-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014141531-A1 |
titleOfInvention |
Method for producing ferroelectric thin film |
abstract |
It is possible to produce a ferroelectric thin film controlled to have the preferential crystal orientation in the (100) plane with a simple process without providing a seed layer or a buffer layer. A ferroelectric thin film is produced on a lower electrode by irradiating a surface of the lower electrode of a substrate having the lower electrode where the crystal plane is oriented in a (111) axis direction, with an atmospheric pressure plasma, coating a composition for forming a ferroelectric thin film on the lower electrode, and heating and crystallizing the coated composition. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020373314-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11552086-B2 |
priorityDate |
2012-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |