http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014134404-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_78f7080287243c656eebb410f01d1212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33b011e77b33662b8bf1f2ff2de7b661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9153f91f54c8309918f02a07e8960f0f
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1021
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-10
filingDate 2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc5f1fa1f7a12a3b3912bc835c8cb83e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3b07c65959e73e9709bd40dcaa02e63
publicationDate 2014-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014134404-A1
titleOfInvention Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same
abstract This invention provides processing steps, methods and materials strategies for making patterns of structures for integrated electronic devices and systems. Processing methods of the present invention are capable of making micro- and nano-scale structures, such as Dual Damascene profiles, recessed features and interconnect structures, having non-uniform cross-sectional geometries useful for establishing electrical contact between device components of an electronic device. The present invention provides device fabrication methods and processing strategies using sub pixel-voting lithographic patterning of a single layer of photoresist useful for fabricating and integrating multilevel interconnect structures for high performance electronic or opto-electronic devices, particularly useful for Very Large Scale Integrated (VLSI) and Ultra large Scale Integrated (ULSI) devices. Processing methods of the present invention are complementary to conventional microfabrication and nanofabrication methods for making integrated electronics, and can be effectively integrated into existing photolithographic, etching, and thin film deposition patterning systems, processes and infrastructure.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502325-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9385062-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9373561-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287161-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9286917-B1
priorityDate 2007-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001042917-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008020565-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6392
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545752

Total number of triples: 29.