Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
filingDate |
2012-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e942499cdd3cf9ca3c5e1547c6583d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6147e5dfd3b721ca7f0cf5a6c0280cb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebe0ebc5020abca43b66242ac419e7a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3c7bf1d48433650f1ee84966a9b6add |
publicationDate |
2014-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014131722-A1 |
titleOfInvention |
Dual phase gallium nitride material formation on (100) silicon |
abstract |
A method for selective formation of a dual phase gallium nitride material on a (100) silicon substrate. The method includes forming a blanket layer of dielectric material on a surface of a (100) silicon substrate. The blanket layer of dielectric material is then patterned forming a plurality of patterned dielectric material structures on silicon substrate. An etch is employed that selectively removes exposed portions of the silicon substrate. The etch forms openings within the silicon substrate that expose a surface of the silicon substrate having a (111) crystal plane. A contiguous AlN buffer layer is then formed on exposed surfaces of each patterned dielectric material structure and on exposed surfaces of the silicon substrate. A dual phase gallium nitride material is then formed on a portion of the contiguous AlN buffer layer and surrounding each sidewall of each patterned dielectric material structure. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023006034-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10217673-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I689091-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I692087-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10243015-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9608160-B1 |
priorityDate |
2012-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |