| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D405-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D405-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61K31-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61K45-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2012-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2227d33b2691436d797e78b263c7eb1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7251bf84a0566c8abf8fa36b7d1e222a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb7fc285f39041b5701d0e14629ee28b |
| publicationDate |
2014-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014127901-A1 |
| titleOfInvention |
Low-k damage free integration scheme for copper interconnects |
| abstract |
A method includes forming a sacrificial layer on a substrate. A hard mask layer is formed on the sacrificial layer. The hard mask layer and the sacrificial layer are etched to form a first plurality of openings in the hard mask layer and the sacrificial layer. A low-k dielectric layer is deposited in the first plurality of openings. The hard mask layer and the sacrificial layer are thereafter removed leaving behind a plurality of low-k dielectric pillar structures having second plurality of openings therebetween. The second plurality of openings are then filled with a copper-containing layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I798749-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111048401-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361068-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016133440-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941151-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11600740-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9767989-B2 |
| priorityDate |
2012-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |