http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014126105-A1

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filingDate 2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f57fb9c65875383e7303b50a9c5aef92
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publicationDate 2014-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014126105-A1
titleOfInvention Capacitor structure and process for fabricating the same
abstract A process for fabricating a capacitor is described. A template layer including a stack of at least one first layer and at least one second layer is formed over a substrate, wherein the at least one first layer and the at least one second layer have different etching selectivities and are arranged alternately. An opening is formed through the template layer. A wet etching process is performed to recess the at least one first layer relative to the at least one second layer, at the sidewall of the opening. A bottom electrode of the capacitor is formed at the bottom of the opening and on the sidewall of the opening, and then the template layer is removed.
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Total number of triples: 38.