| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32257 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B35-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B35-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2014-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8547b5de250b0505a4158fc1b9523776
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4e0623a11f80c164bb8f879d0840692 |
| publicationDate |
2014-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014124826-A1 |
| titleOfInvention |
Method of surface treatment of group iii nitride crystal film, group iii nitride crystal substrate, group iii nitride crystal substrate with epitaxial layer, and semiconductor device |
| abstract |
A Group III nitride crystal substrate is provided for growing an epitaxial layer in which the Group III nitride crystal substrate is used for growing an epitaxial layer on the Group III nitride crystal substrate. The Group III nitride crystal substrate has a surface roughness Ra of 0.5 nm or less and an affected layer in which crystal lattices are out of order and has a thickness of 50 nm or less. The Group III nitride crystal substrate either has a principal plane parallel to any plane of A-plane and M-plane in the wurtzite structure or has an off-angle formed by the principal plane of the Group III nitride crystal substrate and any plane of A-plane and M-plane in the wurtzite structure being 0.05° to 15°. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10759981-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11015098-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014065796-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109509701-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9543393-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9309606-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10156530-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9518340-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202872-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3216839-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10024809-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3800229-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921231-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10316431-B2 |
| priorityDate |
2005-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |