| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f395b7ab9dbfb7a96af77c0d25cf5b33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5239dae8df3d9404d985025f071c6024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_583171e90055583bf625fe03f958232e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate |
2013-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f159f4b3d36eacd76cad909f4da8bcc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16574b00060d75017dc8fca8df41d73f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ccbf06e9278e2f2f41327b748ce7b3d |
| publicationDate |
2014-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014124804-A1 |
| titleOfInvention |
Hetero-substrate, nitride-based semiconductor light emitting device, and method for manufacturing the same |
| abstract |
A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015187876-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9159788-B2 |
| priorityDate |
2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |