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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08d91ff19fce642276d4cd68e163970
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publicationDate 2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014120701-A1
titleOfInvention Dual gate finfet devices
abstract A method comprises: forming a first array of fins and a second array of fins on a substrate; masking off the first array of fins from the second array of fins with a first mask; depositing a dielectric layer on the second array of fins and on the first mask on the first array of fins; masking off the dielectric layer deposited on the second array of fins with a second mask; removing the dielectric layer and the first mask from the first array of fins; removing the second mask from the second array of fins to expose the dielectric layer on the second array of fins; and depositing a chemox layer on the first array of fins. The chemox layer is thinner than the dielectric layer on the second array of fins.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9865459-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016314960-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015123212-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048303-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9129905-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837520-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9337279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9647104-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015118832-A1
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