abstract |
A method of manufacturing a semiconductor device includes the steps of immersing a substrate in a solution containing metal ions to adhere a metal catalyst to a surface of the substrate, immersing the substrate with the metal catalyst adhered thereto in an electroless plating solution to electrolessly plate a layer on the substrate, immersing the substrate in an electroplating solution to electroplate a layer on the electrolessly plated layer using the electrolessly plated layer as a power feeding layer, and forming a metal layer of Cu or Ag on the electroplated layer. The electroplated layer is formed of a different material than the metal layer. |