http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014117377-A1

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filingDate 2014-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0709cd6763214baa0ac11f7a7b9dd937
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publicationDate 2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014117377-A1
titleOfInvention Oxygen-doped gallium nitride single crystal substrate
abstract Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Oxygen-doped {20-21}, {1-101}, {1-100}, {11-20} or {20-22} surface n-type gallium nitride crystals are obtained.
priorityDate 2001-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.