http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014110813-A1

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publicationDate 2014-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014110813-A1
titleOfInvention Absorbers for High Efficiency Thin-Film PV
abstract Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer.
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priorityDate 2011-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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