| abstract |
A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrode 3 having gas supply through holes 6 , a gas supply means and a lower electrode 1 , wherein the gas supply means includes a plane-like member 4 having gas through holes 8 and a plane-like member 5 having gas through holes 10 , and the gas supply through holes 6 and the gas through holes 8 are connected through a groove 7 , and the gas through holes 8 and the gas through holes 10 are connected through a groove 9 , and wherein the gas supply through holes 6 , the gas through holes 8 and the gas through holes 10 are disposed at positions, different from each other on a plane. |