Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
filingDate |
2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6d3c775b97999fb3cf0f69fdabc984 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a51be7116a241fb587bd009710d904e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_358eb94eb84d648f1ad23ad0ffc95ebf |
publicationDate |
2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014087313-A1 |
titleOfInvention |
Stripping solution for photolithography and pattern formation method |
abstract |
A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO 2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10787628-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022047175-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016118315-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2930565-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107130230-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10619126-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9650594-B2 |
priorityDate |
2012-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |