| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ca8617ea717dc2541d07f604fc5331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe8eb8e3b1d12a84ac2f9be80f704730
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a21459b5df35d52d011e8d06ffbc1263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e33e95a94b57b8c39dff42064c929b7 |
| publicationDate |
2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014084382-A1 |
| titleOfInvention |
Dual metal fill and dual threshold voltage for replacement gate metal devices |
| abstract |
A structure and method for forming a dual metal fill and dual threshold voltage for replacement gate metal devices is disclosed. A selective deposition process involving titanium and aluminum is used to allow formation of two adjacent transistors with different fill metals and different workfunction metals, enabling different threshold voltages in the adjacent transistors. |
| priorityDate |
2012-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |