http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014077221-A1

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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd1422eac700378c7174218d123b62d9
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publicationDate 2014-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014077221-A1
titleOfInvention Semiconductor light-emitting device
abstract An embodiment has an emission layer, a first electrode having a reflective metal layer, an insulating layer, first and second conductivity type layers, and a second electrode. The insulating layer is provided on the first electrode and has an opening where a portion of the first electrode is provided. The first conductivity type layer is provided between the insulating layer and the emission layer and has bandgap energy larger than that of the emission layer. The second conductivity type layer is provided on the emission layer and has a current diffusion layer and a second contact layer. The second contact layer is not superimposed on the opening of the insulating layer, and a thickness of the current diffusion layer is larger than that of the first contact layer. The second electrode has a pad portion and a thin portion extends from the pad portion onto the second contact layer.
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