| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-2047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1646
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-39 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-39 |
| filingDate |
2013-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c05bb4fad643ae400b31b5dde601ada |
| publicationDate |
2014-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014076842-A1 |
| titleOfInvention |
Dry etching method and device manufacturing method |
| abstract |
A dry etching method of etching a conductive material layered on a dielectric material, comprising: using a mixed gas including a halogen gas and an oxygen gas as an etching gas, a mixing ratio of the oxygen gas in the mixed gas being equal to or greater than 30% and equal to or less than 60%; setting a gas pressure in a chamber at a time of supplying the mixed gas into the chamber and generating plasma, within a range equal to or greater than 1 Pa and less than 5 Pa; and applying a bias voltage of frequency equal to or greater than 800 kHz and less than 4 MHz as a bias voltage to an etched material in which the conductive material is layered on the dielectric material, and performing etching, wherein the dielectric material is a ferroelectric material and the conductive material is a noble metal material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10181407-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10374140-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10211044-B2 |
| priorityDate |
2011-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |