Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a845931cd04eac777e141c8282c8f24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1bfc230e1879fff7e2330b61882c190e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b21a4d1b8c82a6932af60aea3dd1507 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
filingDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c849dae21b67a0b07bacda42d5ffbc4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1daf16f6375938680bf5cd8a4f974fc2 |
publicationDate |
2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014061867-A1 |
titleOfInvention |
Method for depositing one or more polycrystalline silicon layers on substrate |
abstract |
A method for depositing one or more polycrystalline silicon layers ( 230 c ) on a substrate ( 210 ) by a chemical vapour deposition in a reactor, includes adjusting a deposition temperature between 605° C.-800° C. in a process chamber of the reactor, and depositing the one or more polycrystalline silicon layers on the substrate by using a silicon source gas including SiH4 or SiH2Cl2, and a dopant gas including BCl3. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10246773-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11401162-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I692033-B |
priorityDate |
2011-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |