| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5ddf95deaddeccb261fa6c4480d447a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59c29bba1d483dd0e35a937d48ff2545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2012-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_341b8b3600a3277bdc08c74126949ac2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b35f1f134d8042926b83b8ec62927fbc |
| publicationDate |
2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014054711-A1 |
| titleOfInvention |
System and Method for a Vertical Tunneling Field-Effect Transistor Cell |
| abstract |
A semiconductor device cell is disclosed. The semiconductor device cell includes a transistor gate having a gating surface and a contacting surface and a source region contacted by a source contact. The semiconductor device cell further includes a drain region contacted by a drain contact, wherein the drain contact is not situated opposite the source contact with respect to the gating surface of the transistor gate. Additional semiconductor device cells in which the gate contact is closer to the source contact than to the drain contact are disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017141235-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978868-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8883594-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600886-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600881-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014256102-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9153581-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10497804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734513-B2 |
| priorityDate |
2012-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |