http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014042473-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a85177812b5ec619bf1e37048407dd1c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60 |
| filingDate | 2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf15f248dfb0e9817b0fe8baded9fbc1 |
| publicationDate | 2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2014042473-A1 |
| titleOfInvention | Vertical light emitting diode and manufacturing method and application thereof |
| abstract | A vertical light emitting diode (LED) is disclosed, which includes a conductive substrate; a conductive diamond-like carbon (DLC) layer located on the conductive substrate; a first passivation layer disposed on the conductive DLC layer and formed with a first opening; a first electrode located on the conductive DLC layer and in the first opening of the first passivation layer; a semiconductor epitaxial multilayer structure disposed on the first electrode; a second passivation layer disposed on the first passivation layer and covering the lateral surface of the semiconductor epitaxial multilayer structure, wherein a second opening is formed in the second passivation layer to expose the surface of the semiconductor epitaxial multilayer structure; and a second electrode located on the semiconductor epitaxial multilayer structure and in the second opening of the second passivation layer. A method for manufacturing the vertical LED mentioned above is also disclosed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831222-B2 |
| priorityDate | 2010-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.