Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be4a0d958455d7f10f0ac40ff2dd0104 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
filingDate |
2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2c621f13a502d193e40e8c9d65502c6 |
publicationDate |
2014-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014038345-A1 |
titleOfInvention |
Method of chalcogenization to form high quality cigs for solar cell applications |
abstract |
A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 300 C and about 400 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. A partial selenization is performed at a temperature between about 300 C and about 400 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 400 C and about 550 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014174540-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859405-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859406-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016032046-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013309804-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013309805-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9175389-B2 |
priorityDate |
2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |