http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014038345-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be4a0d958455d7f10f0ac40ff2dd0104
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
filingDate 2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2c621f13a502d193e40e8c9d65502c6
publicationDate 2014-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014038345-A1
titleOfInvention Method of chalcogenization to form high quality cigs for solar cell applications
abstract A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 300 C and about 400 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. A partial selenization is performed at a temperature between about 300 C and about 400 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 400 C and about 550 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014174540-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859405-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859406-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016032046-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013309804-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013309805-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9175389-B2
priorityDate 2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419593302
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14830
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID61173
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453417571
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546359
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414859283
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID94359
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419548946
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448612525
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415776239
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6326970
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID10290742
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID19601290
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID91501
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82894
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6547
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419595266
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559218
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415729636
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID73973
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82895
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449124354

Total number of triples: 44.