| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8d7a963516c60934729f785cfe5699f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-52 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C3-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C21-008 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2013-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_353ad577891f6fe2a937acf946397028 |
| publicationDate |
2014-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014021433-A1 |
| titleOfInvention |
Microelectronic device with programmable memory |
| abstract |
A microelectronic device with programmable memory is provided having at least: a first electrode ( 1 ) and a second electrode ( 9 ) having positioned between them a first layer of doped chalcogenide material ( 5 ) having an atomic concentration n 1 of a doping metallic element d 1. The device further has a second layer of doped chalcogenide material ( 8 ) positioned between the first electrode ( 1 ) and the second electrode ( 9 ), the second layer of doped chalcogenide material ( 8 ) having an atomic concentration n 2 of a doping metallic element d 2, the atomic concentration n 2 being strictly less than the atomic concentration n 1. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658588-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I757460-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108963071-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018186166-A1 |
| priorityDate |
2012-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |