http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014017868-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2211-4016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-404
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
filingDate 2013-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46d0a018ca45952d3d57b5654abcdfff
publicationDate 2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014017868-A1
titleOfInvention Integrated circuit having memory cell array including barriers, and method of manufacturing same
abstract An integrated circuit device having (i) a memory cell array which includes a plurality of memory cells arranged in a matrix of rows and columns, wherein each memory cell includes at least one transistor having a gate, gate dielectric and first, second and body regions, wherein: (i) the body region of each transistor is electrically floating and (ii) the transistors of adjacent memory cells have a common first region and/or a common second region. Each common first region and/or second regions of transistors of adjacent memory cells includes a barrier disposed therein and/or therebetween, wherein each barrier provides a discontinuity in the common regions and/or includes one or more electrical characteristics that are different from one or more corresponding electrical characteristics of the common regions.
priorityDate 2007-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005179079-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003203546-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82901
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545842
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14767304
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426694112
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452894838

Total number of triples: 31.