http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014004700-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0292 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate | 2013-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33c9934a532be488a65534bb92e9a873 |
publicationDate | 2014-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2014004700-A1 |
titleOfInvention | Manufacturing method for a semiconductor apparatus |
abstract | A manufacturing method includes forming a wiring layer including a first wiring connected to a gate electrode of a semiconductor element, a second wiring having an area in an orthogonal projection onto a plane including a surface of the semiconductor substrate larger than the first wiring, and a third wiring connected to a protective element, from a conductive material film by etching using plasma on the conductive material film. In the forming the wiring layer, the etching is conducted in a manner that a part that becomes the first wiring of the conductive material film is separated from the part that becomes the second wiring of the conductive material film earlier than a part that becomes the third wiring of the conductive material film. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11335676-B2 |
priorityDate | 2012-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.