| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2013-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04cc4bb930d31f9a1c0f7f7a9070d8da |
| publicationDate |
2013-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013341708-A1 |
| titleOfInvention |
Semiconductor device and method of manufacturing the semiconductor device |
| abstract |
A low concentration P-type impurity (LCPI) layer situated over a drain layer has an impurity concentration lower than the drain layer. An N-type impurity base layer is situated over the LCPI layer. A gate insulating film is formed on the lateral side of a trench. A bottom insulation film formed to the bottom and lower portion on the lateral side of the trench has a larger thickness than the gate insulating film. A gate electrode is filled in the trench. At a cross section in the direction of the thickness including the bottom of the trench, a profile of the P-type impurity concentration is substantially constant and the difference between the maximum and minimum values is 10% or less of the average value for the maximum and minimum values. Further, the profile has a maximal value and a minimal value situated from the maximal value to the drain layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11538920-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10847640-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170556-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016336443-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3675179-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11552185-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127839-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022148923-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837492-B2 |
| priorityDate |
2012-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |