| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a819eda0adf22936a52362eeebb9fb4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1096 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-10 |
| filingDate |
2013-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_991098601b66b003fbfb28da6876bc69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_416f97c93a1a6d8843bd8f1fdcb20e7a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b738dba8887a048a3ef1d5d45ec5d32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90cfc8d57a8bd807fada98a8e0937697 |
| publicationDate |
2013-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013340672-A1 |
| titleOfInvention |
Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals |
| abstract |
Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid. |
| priorityDate |
2008-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |