| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_354dc6d9b5008589bd341b8076cb6a7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb70af08da71684b16290069b95ea92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88b2340f9b97a7e6eefe82797df5afe9 |
| publicationDate |
2013-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013328133-A1 |
| titleOfInvention |
Integrated circuit device with transistors having different threshold voltages |
| abstract |
Integrated circuit device with transistors having different threshold voltages and methods of forming the device are provided. The device may include the first, second and third transistors having threshold voltages different from each other. The first transistor may be free of a stacking fault and the second transistor may include a stacking fault. The concentration of the channel implant region of the third transistor may be different from the concentration of the channel implant region of the first transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022216206-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I548069-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064888-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015001594-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11527536-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015228645-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015097197-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9721947-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11410993-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553580-B2 |
| priorityDate |
2012-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |