http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013307079-A1

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filingDate 2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a98a3af0fe6c816fa91ad46d30b7aeac
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publicationDate 2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013307079-A1
titleOfInvention Etch resistant barrier for replacement gate integration
abstract Semiconductor devices and methods of their fabrication are disclosed. One device includes a plurality of gates and a dielectric gap filling material with a pre-determined aspect ratio that is between the gates. The device further includes an etch resistant nitride layer that is configured to maintain the aspect ratio of the dielectric gap filling material during fabrication of the device and is disposed above the dielectric gap filling material and between the plurality of gates.
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priorityDate 2012-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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