| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2337854b32f84cf9d8f56c84a091ea06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cbc291d77c061ac9a216f86ec010a3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2013-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03e2bb373022ca15ab5ed644d108e0ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78526b1a050461a8b638c84f78412be6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9572333c0a55dc05c5cbf474effeb78 |
| publicationDate |
2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013307063-A1 |
| titleOfInvention |
MANUFACTURING METHOD OF GaN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| abstract |
Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9966519-B2 |
| priorityDate |
2011-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |