| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2013-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cb6c791a3663c9fbacf7cb3c0992930
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66f3cf5cf301c91495cab5d27b60fb88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6610469594d15e8544edf5f54a19ac41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d701567b85a716221efa10a784cd6240 |
| publicationDate |
2013-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013299917-A1 |
| titleOfInvention |
Static Random Access Memory (SRAM) Cell and Method for Forming Same |
| abstract |
An embodiment is a method for forming a static random access memory (SRAM) cell. The method comprises forming transistors on a semiconductor substrate and forming a first linear intra-cell connection and a second linear intra-cell connection. Longitudinal axes of the active areas of the transistors are parallel. A first pull-down transistor and a first pull-up transistor share a first common gate structure, and a second pull-down transistor and a second pull-up transistor share a second common gate structure. The first linear intra-cell connection electrically couples active areas of the first pull-down transistor and the first pull-up transistor to the second common gate structure. The second linear intra-cell connection electrically couples active areas of the second pull-down transistor and the second pull-up transistor to the first common gate structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019252367-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10417368-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10707199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019096807-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018006009-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10777505-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239228-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013260525-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8822295-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269784-B2 |
| priorityDate |
2009-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |