| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d7dc140c0f0e23ee31716201cd1a863d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9c2e1af948ed88b1d501e78d99fe780
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1cd0cc87b5c545f4ab3827fd73b2fe8f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
2012-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01ceee7354c78fd887f9eafe37089829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a5e209dd5c32c045e10f7d282d191bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95738dbc7fa90dd00277e7d3964f5f4f |
| publicationDate |
2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013288178-A1 |
| titleOfInvention |
Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof |
| abstract |
The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016085149-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015129915-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10921711-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9709890-B2 |
| priorityDate |
2012-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |