| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e1e7cd63242954e847d2143a713fbe22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_892d05fbd30f8a011e436dc30e013c5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d048c98668b698b69d26813d674aa005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_676b80da7ac92b84e447a83fb1630ae1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7839 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02269
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2013-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cbb66249e0087e2ba0cfe6f2db9a8ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12fa03b9f25eba53e8257969ed0dce17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e101b4a5302eb83e2a40b3ff161f9b8 |
| publicationDate |
2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013285048-A1 |
| titleOfInvention |
Enhanced electron mobility at the interface between gd2o3(100)/n-si(100) |
| abstract |
A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd 2 O 3 (100)). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10580872-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018337238-A1 |
| priorityDate |
2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |