| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2013-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5563e68c7c10017c83fb15b655a22d87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a43f801379984dcd1a4b941d63d017ef |
| publicationDate |
2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013285047-A1 |
| titleOfInvention |
Semiconductor device |
| abstract |
A transistor including an oxide semiconductor film, in which the threshold voltage is prevented from being a negative value, is provided. A high quality semiconductor device having the transistor including an oxide semiconductor film is provided. A transistor includes an oxide semiconductor film having first to third regions. The top surface of the oxide semiconductor film in the first region is in contact with a source electrode or a drain electrode. The top surface of the oxide semiconductor film in the second region is in contact with a protective insulating film. The thickness of the second region is substantially uniform and smaller than the maximum thickness of the first region. The top surface and a side surface of the oxide semiconductor film in the third region are in contact with the protective insulating film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016245556-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113388823-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10747081-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318484-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10396096-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018175072-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113284915-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10068906-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741586-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9865788-B2 |
| priorityDate |
2012-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |