| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2013-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8672705ddc1d3e58b910bea96c4ccedc |
| publicationDate |
2013-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013270629-A1 |
| titleOfInvention |
Semiconductor device having vertical transistor |
| abstract |
Disclosed herein is a device that includes: a semiconductor substrate; a first semiconductor pillar having a side surface that is substantially perpendicular to a main surface of the semiconductor substrate; an insulator pillar having a side surface that is substantially perpendicular to the main surface of the semiconductor substrate and a top surface that is substantially parallel to the main surface of the semiconductor substrate; a first gate electrode covering the side surface of the first semiconductor pillar with intervention of a first gate insulation film; an extended gate electrode covering the side surface of the insulator pillar, the extended gate electrode being configured integrally with the first gate electrode; and a conductive film formed on the top surface of the insulator pillar, the conductive film being in contact with the extended gate electrode in a position above the top surface of the insulator pillar. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015104919-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837409-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318576-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9691750-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015118833-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022130963-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9991267-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9607899-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017317080-A1 |
| priorityDate |
2012-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |