http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013264543-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0232
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232
filingDate 2011-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df7afc082f8f481205daaa222d4c9055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c0f2e7e240fc86421a57946517efca3
publicationDate 2013-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013264543-A1
titleOfInvention Photodetection device
abstract The present invention relates to a photodetector for detecting an infrared-light emission having a given wavelength (λ) comprising a multilayer with: a layer ( 11 ) of a partially absorbent semiconductor; a spacer layer ( 12 ) made of a material that is transparent to said wavelength; and a structured metallic mirror ( 13 ), the distance (g) between the top of said mirror and said spacer layer being smaller than λ and said mirror comprising a network of holes defining an array of metallic reliefs with a pitch P of between 0.5 λ/nSC and 1.5 λ/nSC, where nSC is the real part of the refractive index of the semiconductor, a relief width L of between 9P/10 and P/2 and a hole depth h of between λ/100 and λ/15.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11333812-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10546886-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017309663-A1
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priorityDate 2010-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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