| abstract |
Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized with an ion implantation system for processing a substrate. The ion implantation system may comprise: an ion source comprising an ion source chamber, the ion source chamber including an ion source chamber wall that define an ion generation region and an extraction aperture, through which ions generated in the ion generation region are extracted; an extraction system positioned downstream of the ion source near the extraction aperture; a material source comprising a fist source containing first material, a second source containing the second material, and a first and second conduits, where the first conduit may be in communication with the first source and the ion source chamber to provide the first material from the first source to the ion source chamber, and where the second conduit may be in communication with the second source and a first region outside of the ion source chamber to provide the second material from the second source to the first region. |