| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a1992a1472df9555df7d7103ce298f8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1f48ca56a757e738e36d6ea3d3bc0cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_54fb35b2c5f51ef2c7e028c93622cb37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a73af8cebeacb252b0546786ae7f482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_328a0f29e76733d81435229b34d2fab6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e08907fb22c20a41a5dcdfcfb120adae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_025277247e85ff803acd17782b2c7799 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4933 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66719
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2013-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_407c4c1fa825b099f1c3e0a63b5ff3be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_718a8311944ca0d2f088c98719ed97fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b1f349ab40e1354613e01f203de28ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b78260b39c3460616845b40238fef29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b77e0c4b00de131583349003a3cb39db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91c7169083a460721dddf827607b2c87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3a221929a6b3e07f2e47b10e77ac684 |
| publicationDate |
2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013228860-A1 |
| titleOfInvention |
Shielded gate trench mos with improved source pickup layout |
| abstract |
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9356132-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109148569-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105981144-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9252265-B2 |
| priorityDate |
2010-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |