| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_384075071789cc47b8c6da73338bca57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_179e700870b918cc8ce77e14df256ff2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4a18311e50e07034550aab39790d47d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f20cb045e7a60c5b417b00b3d8053ee8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10 |
| filingDate |
2012-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdced4ce4ea4b24b613e8cab6fad5dfd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4df3ebae997ac9292b7b9e121a201818
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12d6ef219b7bb94e0dcead8328bd9697 |
| publicationDate |
2013-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013202782-A1 |
| titleOfInvention |
Thin Film Permeation Barrier For Devices And Substrates |
| abstract |
A method for fabricating a device having a barrier layer over a substrate is provided. A first sublayer of the barrier layer may be deposited via chemical vapor deposition using a first set of deposition parameters. The first set of deposition parameters may include a power density, a deposition pressure, a non-deposition gas flow rate and a deposition gas flow rate. One or more parameters may be set related to the flow ratio of non-deposition gas to deposition gas multiplied by the power density, or the power density divided by (1) the deposition pressure, (2) the sum of the non-deposition gas flow rate and the deposition gas flow rate, or (3) the precursor gas flow rate. The material of the first barrier layer may be selected to have a particular plasma etch rate compared to the etch rate of thermally growth silicon oxide under the same etching conditions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11751426-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9131586-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10505137-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11018319-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9461269-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11309522-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016240790-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483487-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015061656-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10205103-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014327376-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017040399-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015115235-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9954045-B2 |
| priorityDate |
2012-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |