| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2013-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f54fa1185f5b72cd84815cce3d8ddad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90b12f5a9ca7105a6ad574fc109d5267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cde373a8247a343d0cd7403a19245fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6e08aa961891876e8af8272c6ac3613 |
| publicationDate |
2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013193522-A1 |
| titleOfInvention |
Replacement metal gate structures providing independent control on work function and gate leakage current |
| abstract |
The thickness and composition of a gate dielectric can be selected for different types of field effect transistors through a planar high dielectric constant material portion, which can be provided only for selected types of field effect transistors. Further, the work function of field effect transistors can be tuned independent of selection of the material stack for the gate dielectric. A stack of a barrier metal layer and a first-type work function metal layer is deposited on a gate dielectric layer within recessed gate cavities after removal of disposable gate material portions. After patterning the first-type work function metal layer, a second-type work function metal layer is deposited directly on the barrier metal layer in the regions of the second type field effect transistor. A conductive material fills the gate cavities, and a subsequent planarization process forms dual work function metal gate structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016064502-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048217-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059314-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015035026-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10256319-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10109629-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013005156-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014203335-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957780-B2 |
| priorityDate |
2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |