| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_080cb047a4e6ade9c641a66e609c2f9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_243775132ca25ec5fc392dc4b6934e61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0de075613beee934c315db42405aaac0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c2ccc4512e998e637203b94d67eeb8cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2012-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce8b9b8b25a81bb5b407ea3063ea26e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12fb79b4a2d4541b52d91500954b5bc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67883b5c923d29323fa6292c3984317c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76e68b5cad7280acfccaea36c7b39ec6 |
| publicationDate |
2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013189833-A1 |
| titleOfInvention |
Method of Forming Self-Aligned Contacts for a Semiconductor Device |
| abstract |
Disclosed herein is a method of forming self-aligned contacts for a semiconductor device. In one example, the method includes forming a plurality of spaced-apart sacrificial gate electrodes above a semiconducting substrate, wherein each of the gate electrodes has a gate cap layer positioned on the gate electrode, and performing at least one etching process to define a self-aligned contact opening between the plurality of spaced-apart sacrificial gate electrodes. The method further includes removing the gate cap layers to thereby expose an upper surface of each of the sacrificial gate electrodes, depositing at least one layer of conductive material in said self-aligned contact opening and removing portions of the at least one layer of conductive material that are positioned outside of the self-aligned contact opening to thereby define at least a portion of a self-aligned contact positioned in the self-aligned contact opening. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812552-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8936979-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9312174-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10439046-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015170966-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653573-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013328112-A1 |
| priorityDate |
2012-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |