http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013162925-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d37147a1eebc1b4c794a203b6f0da7e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7343a2d9b29e818a63bf3a239a52718a
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136236
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2012-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c57890c128868aec1de7765cd3ac8f9
publicationDate 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013162925-A1
titleOfInvention Thin-film Transistor Substrate and Manufacturing Method Thereof and Liquid Crystal Display Device
abstract The present invention provides a TFT substrate and manufacturing method thereof and a liquid crystal display device. The method includes: sequentially depositing a dielectric layer, a first metal layer, and a first semiconductor layer on a substrate; applying half-toning technique to form a first photoresist layer; removing portions of the dielectric layer, the first metal layer and the first semiconductor layer and making a portion of the dielectric layer exposed; removing the first photoresist layer and sequentially forming a second semiconductor layer, a first protection layer, and a second metal layer on the substrate; forming a second photoresist layer; removing all the layers on the substrate that are not covered; and removing the second photoresist layer and forming a second protection layer. The invention uses only two masking processes of half-toning and regular mask. The number of masking process is reduced and the manufacturing of TFT substrate is greatly simplified.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018308879-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108320668-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192908-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859440-B2
priorityDate 2011-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010295049-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57350325

Total number of triples: 26.