http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013162925-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d37147a1eebc1b4c794a203b6f0da7e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7343a2d9b29e818a63bf3a239a52718a |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136236 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate | 2012-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c57890c128868aec1de7765cd3ac8f9 |
publicationDate | 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2013162925-A1 |
titleOfInvention | Thin-film Transistor Substrate and Manufacturing Method Thereof and Liquid Crystal Display Device |
abstract | The present invention provides a TFT substrate and manufacturing method thereof and a liquid crystal display device. The method includes: sequentially depositing a dielectric layer, a first metal layer, and a first semiconductor layer on a substrate; applying half-toning technique to form a first photoresist layer; removing portions of the dielectric layer, the first metal layer and the first semiconductor layer and making a portion of the dielectric layer exposed; removing the first photoresist layer and sequentially forming a second semiconductor layer, a first protection layer, and a second metal layer on the substrate; forming a second photoresist layer; removing all the layers on the substrate that are not covered; and removing the second photoresist layer and forming a second protection layer. The invention uses only two masking processes of half-toning and regular mask. The number of masking process is reduced and the manufacturing of TFT substrate is greatly simplified. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018308879-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108320668-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192908-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859440-B2 |
priorityDate | 2011-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.