Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cea8dbe61b43fd71e0c4025d95ea862d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0f0fff8a80e7d9e79aa39a0a715c38a2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf51fddc5d49f8f82899d45e4bcfdb73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f4e2b777b1453b4137c169269f40e87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e6b3d78746b3ccc839fcb96db3264ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
filingDate |
2012-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e62cf0a6c90df3ec9175e081fe9b689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c41c8569aa9542276c3314a3d896ba9e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efa0d3880e024ab7c06d0fc1f48573e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4037d67d94e10c394b761c6aa8ea1b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59c9ab78a87ff49c1244cd405944b03d |
publicationDate |
2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2013161694-A1 |
titleOfInvention |
Thin hetereostructure channel device |
abstract |
A method of fabricating a semiconductor device that includes providing a substrate having at least a first semiconductor layer atop a dielectric layer, wherein the first semiconductor layer has a first thickness of less than 10 nm. The first semiconductor layer is etched with a halide based gas at a temperature of less than 675° C. to a second thickness that is less than the first thickness. A second semiconductor layer is epitaxially formed on an etched surface of the first semiconductor layer. A gate structure is formed directly on the second semiconductor layer. A source region and a drain region is formed on opposing sides of the gate structure. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997414-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016163707-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015371889-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017054024-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014252483-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101827148-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11171058-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11075198-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8889508-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9728464-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10032680-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9362308-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287264-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015199655-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016118160-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019123179-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10943995-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019125361-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014308785-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8796772-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170332-B2 |
priorityDate |
2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |