http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013161676-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-58
filingDate 2012-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47ddf46fe085ab709cfd1530061b7522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed05736bce96542a40b6f5046a8bf069
publicationDate 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013161676-A1
titleOfInvention Group iii nitride semiconductor light-emitting device
abstract The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28≦n×d 1 ×2/λ≦0.42 or 0.63≦n×d 1 ×2/λ≦0.77, wherein n represents the refractive index of the transparent film, d 1 represents the thickness of the transparent film in the direction orthogonal to an inclined face thereof, and λ represents the wavelength of the light emitted from the MQW layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10863200-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9184343-B2
priorityDate 2011-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 22.