| abstract |
Embodiments of the invention generally provide methods for forming a silicon-based photovoltaic device. In one embodiment, a method includes forming a pattern inhibitor layer on a back surface of a substrate, wherein the pattern inhibitor layer covers a first portion of the back surface and a second portion of the back surface remains substantially free of the pattern inhibitor layer. The method further includes forming a passivation layer containing aluminum oxide on the second portion of the back surface and maintaining the pattern inhibitor layer substantially free of the passivation layer during a selective atomic layer deposition (S-ALD) process. Additionally, the method includes removing the pattern inhibitor layer from the back surface to reveal the first portion of the back surface and subsequently forming a contact layer on the first portion of the back surface. |